运用 VR 软件通过 PVT 法建立 SiC 晶体生长模型
VR PVT SiC（Virtual Reactor）是一款用于模拟 SiC 块状晶体从气相（如 PVT 和 HTCVD 方法）长期生长的模拟仿真软件工具。VR 软件功能包括分析热效应分析、化学模型、传质、晶体形状演变、粉末电荷降解，可以对生长本身和冷却阶段的应力和位错动力学进行模拟。因此，结果可能包括穿透位错和基面位错的密度以及残余应力。
VR 软件对以下实际工作特别有用：
- 重新设计炉子，以获得更有利的热曲线或质量传输模式。也就是说，通过 VR 软件可以快速、低成本地尝试多种硬件改造方案。此外它还能提供所有 "监测 "数据的即时访问。在 VR 软件中实施的模型将反映出修改对晶体形状、粉末电荷、可能的寄生沉积等的影响。
- 开发配方。由于块状晶体生长需要优化一组随时间变化的参数，如温度的变化，因此反复运行漫长而昂贵的过程可能成本很高。此外，由于缺乏监测数据，对于结果的解释也会变得复杂。另一方面，软件可以在不浪费资源的情况下快速接近最佳配方。它将实验优化缩小到微调阶段。请注意，建模方法适用于加热阶段、晶体生长配方和冷却阶段。
SiC crystal shape evolution and powder charge degradation as reported at IWMCG-9 (2018) by Galyukov et. al.
关于VR-PVT SiC具体内容：
Publications by (or in collaboration with) VR Users
“Effect of Material Loss through the Porous Crucible on SiC Bulk Crystal Growth” by Mark Ramm, M. Arzig, M. Bogdanov, A. Denisov, A. Kulik, B. Mamin, V. Neverov, R. Sidorov, D. Skvortsov, B. Spill, J. Steiner, P. Wellmann
“Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction” by R.Hock, K.Konias, L. Perdicaro, A.Magerl, P.Hens, P.J.Wellmann, Materials Science Forum Vols. 645-648 (2010) pp 29-32
“Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace” by Eugene Tupitsyn, Alexander Galyukov, Maxim Bogdanov, Alexey Kulik, Mark Ramm, Yuri Makarov, Tangali Sudarshan, Materials Science Forum Vols. 600-603 (2009) pp 27-30
“In situ visualization of SiC physical vapor transport crystal growth” by PeterWellmann, ZiadHerro, AlbrechtWinnacker, RolandPüsche, MartinHundhausen, PierreMasri,
AlexeyKulik, MaximBogdanov, SergeyKarpov, MarkRamm, YuriMakarov, Journal of Crystal Growth 275, p.1-2, (2005)
“Modeling analysis of free-spreading sublimation growth of SiC crystals” by Bogdanov M.V., Demina S.E., Karpov S.Yu., Kulik A.V., Ofengeim D.Kh., Ramm M.S., Mokhov E.N., Roenkov A.D., Vodakov Yu.A., Makarov Yu.N., Helava H., Materials Research Society Symposium Proceedings, Vol.742, p.K1.3, (2003)
“Inverse-computation design of a SiC bulk crystal growth system”, Kulik A.V., Demina S.E., Kochuguev S.K., Ofengeim D.Kh., Karpov S.Yu., Vorob’ev A.N., M.V. Bogdanov, Ramm M.S., Zhmakin A.I., Alonso A.A., Gurevich S.G., Makarov Yu.N., Materials Research Society Symposium Proceedings, Vol.640, p.H1.6.1-H1.6.6, (2001)
“Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT” by Selder M., Kadinski L., Makarov Yu., Durst F., Wellmann P., Straubinger T., Hofmann D., Karpov S., Ramm M., Journal of Crystal Growth, Vol.211, p.333-338, (2000)
Publications
“SiC Sublimation Growth at Small Spacing between Source and Seed” by E.N. Mokhov, A.D. Roenkov, A.S. Segal Materials Science Forum 740-742:69-72 (2013), DOI: 10.4028/www.scientific.net/MSF.740-742.69
“Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals” by Talalaev, R.A., Segal, A.S., Yakovlev, E.V., Vorob’ev, A.N., book chapter in “Crystal Growth Technology: Semiconductors and Dielectrics” (2010)
“Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth” by Bogdanov M.V., Galyukov A.O., Karpov S.Yu., Kulik A.V., Kochuguev S.K., Ofengeim D.Kh., Tsirulnikov A.V., Ramm M.S., Zhmakin A.I., Makarov Yu.N., Journal of Crystal Growth, Vol.225, p.307-311, (2001)
“Mass transport and powder source evolution in sublimation growth of SiC bulk crystals” by Karpov D.S., Bord O.V., Ramm M.S., Karpov S.Yu., Zhmakin A.I., Makarov Yu.N., Materials Science Forum, Vol.353-356, p.37-40, (2001)
“Virtual reactor: a new tool for SiC bulk crystal growth study and optimization” by Bogdanov M.V., Galyukov A.O., Karpov S.Yu., Kulik A.V., Kochuguev S.K., Ofengeim D.Kh., Tsirulnikov A.V., Zhmakin I.A., Komissarov A.E., Bord O.V., Ramm M.S., Zhmakin A.I., Makarov Yu.N., Materials Science Forum, Vol.353-356, p.57-60, (2001)
“Modeling of PVT Growth of Bulk SiC Crystals: General Trends and 2” to 4” Reactor Scaling” by M.S. RAMM, A.V. KULIK, I.A. ZHMAKIN, S.Yu. KARPOV, O.V. BORD, S.E. DEMINA, Yu.N. MAKAROV, MRS symposia proceedings, Materials Research Society, Vol. 616, p 227-233, (2000)
“Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas” by Segal A.S., Vorob’ev A.N., Karpov S.Yu., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A., Makarov Yu.N., Journal of Crystal Growth, Vol.208, p.431-441, (2000)
“Analysis of sublimation growth of bulk SiC crystals in tantalum container” by Karpov S.Yu., Kulik A.V., Zhmakin I.A., Makarov Yu.N., E.N. Mokhov, Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A., Journal of Crystal Growth, Vol.211, p.347-351, (2000)
Publications 1996-1999
“Specific features of sublimation growth of bulk SiC crystals in tantalum container” by Makarov Yu.N., Demina S.E., Karpov S.Yu., Kulik A.V., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A., Zhmakin A.I., International Conference on Silicon Carbide and Related Materials, Abstract N 247., (1999)
“Transport phenomena in sublimation growth of SiC bulk crystals” by Segal A.S., Vorob’ev A.N., Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Ramm M.G. , Ramm M.S., Roenkov A.D., Vodakov Yu.A. , Zhmakin A.I., Materials Science and Engineering, Vol.B61-62, p.40-43, (1999)
“Optimization of sublimation growth of SiC bulk crystals using modeling” by Ramm M.S., Mokhov E.N., Demina S.E., Ramm M.G., Karpov S.Yu., Roenkov A.D , Vodakov Yu.A., Segal A.S., Vorob’ev A.N., Kulik A.V., Makarov Yu.N., Materials Science and Engineering, Vol.B61-62, p.107-112, (1999)
“Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth” by Egorov Yu.E., Galyukov A.O., Gurevich S.G., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Segal A.S., Vodakov Yu.A., Vorob’ev A.N., Zhmakin A.I., Materials Science Forum, Vol.264-268, p.61-64, (1998)
“Simulation of Sublimation Growth of SiC Single Crystal” by S.Yu. Karpov, Yu.N. Makarov, M.S. Ramm, Physica Status Solidi (b), Vol.202, p.201-220, (1997)
“Modelling of species transport and excess phases formation during sublimation growth of SiC in sandwich system” by Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Talalaev R.A., Vodakov Yu.A., Institute of Physics Conference Series, N 155, Chapt.9, p.655-658, (1997)
“Analysis of silicon carbide growth by sublimation sandwich method” by Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Talalaev R.A., Vodakov Yu.A.,
Journal of Crystal Growth, Vol. 173, p.408-416, (1997)
“Control of SiC growth and graphitization in sublimation sandwich system” by Karpov S.Yu., Makarov Yu.N., Ramm M.S., Talalaev R.A. , Materials Science and Engineering, Vol.B46, p.340-344, (1997)
“Analytical model of silicon carbide growth under free-molecular transport conditions” by Karpov S.Yu., Makarov Yu.N., Ramm M.S., Journal of Crystal Growth, Vol.169, p.491-495, (1996)
“Theoretical consideration of Si-droplets and graphite inclusions formation during chemical vapor deposition of SiC epitaxial layers” by Karpov S.Yu., Makarov Yu.N., Ramm M.S., Institute of Physics Conference Series, N.142, Chapt.1, p.177-180, (1996)
