SiLENSe——用于发光二极管 (LED) 带隙工程的软件工具
SiLENSe——用于发光二极管 (LED) 带隙工程的软件工具
SiLENSe 是一款软件工具，用于对由立方 III-V 族化合物（AlGaInAs、AlGaInP、InGaAsP、AlGaInSb 和 GaInAsSb）和晶格 III-氮化物（AlInGaN 和 ZnMgO）制成的发光二极管（LED）和激光二极管（LD）的有源区进行 1D 模拟。设备和外延工程师均可使用该软件。软件中的载流子传输模型可以模拟极性、半极性和非极性结构，并考虑到氮化物异质结构的具体特征，包括极化效应、高密度穿线位错和俄歇复合。最后一个原因是氮化物发光二极管在中等和高电流密度下出现内部量子效率下降。SiLENSe 软件提供了 LED 异质结构的关键参数分布，包括部分（电子和空穴）电流、电场和电势、载流子复合率以及载流子浓度。该程序能够计算梯度组成的异质结构。
请注意，非辐射复合的另一个通道 LED 台面侧壁的表面复合——是在芯片级模拟的，参见 Micro-LEDs。
SiLENSe 软件提供了 LED 异质结构的以下特性:
- 不同偏压下 LED 的能带图；
- 器件结构中电子和空穴浓度的分布；
- 电场分布；
- 辐射和非辐射复合率；
- 电流密度对 pn 结偏压的依赖性(I-V 曲线)；
- 内部量子效率(IQE)对电流密度的依赖性；
- 量子阱中电子和空穴的波函数；
- 单个量子阱和整个结构的发射和增益谱；
- 边缘发射激光二极管的波导模式(TE 和 TM *):
- 边缘发射激光二极管的阈值电流和功率-电流特性。
* 这些选项仅适用于激光版
上述信息为优化 LED 结构和开发新型发光器件奠定了良好基础。
支持的材料
SiLENSe 软件包含一个特殊模块，用于轻松指定材料属性。默认数据库包含立方 III-V 族（AlGaInAs、AlGaInP、InGaAsP、AlGaInSb和GaInAsSb）和非晶（AlInGaN和ZnMgO）材料的属性。用户可以编辑现有材料，添加新材料。
模拟示例
为了说明 SiLENSe 软件的功能，我们向您推荐以下模拟示例：
Example 1 Blue SQW and MQW LED heterostructures
Example 2 Hybrid II-O/III-N LED (ZnO-based LED)
Example 3 Polar/Semipolar/Nonpolar Heterostructures
其中一些示例还附有项目文件，供 SiLENSe 用户重现计算结果。
Band diagram of an MQW LED
界面
SiLENSe 软件具有友好的图形用户界面 (GUI)，旨在最大限度地减少用户开始模拟所需的时间。计算结果的交互式可视化可以很好地显示 LED 的运行情况。计算结果还可以导出，以便在外部浏览器中进行可视化。
Layer-by-layer visualization of the input date specification for an LED structure
Band diagram and carrier wave functions
STR 团队和 SiLENSe 用户的出版物
GaN基器件
“Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs” by Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee, Henryk Turski, Shyam Bharadwaj, Ryan Page, Vladimir Protasenko, Huili (Grace) Xing, Jonas Lähnemann, and Debdeep Jena, 2021 J. Phys. D: Appl. Phys. 54 495106, https://iopscience.iop.org/article/10.1088/1361-6463/ac2446
“Polarization-dependent hole generation in 222 nm-band AlGaN-based Far-UVC LED: a way forward to the epi-growers of MBE and MOCVD”, Shahzeb Malik, Muhammad Usman, M. Ajmal Khan, and Hideki Hirayamab, J. Mater. Chem. 2021, https://doi.org/10.1039/D1TC03774A
“Comparison of Ultraviolet B Light-Emitting Diodes with Single or Triple Quantum Wells”, Tim Kolbe,* Arne Knauer, Jan Ruschel, Jens Rass, Hyun Kyong Cho, Sylvia Hagedorn, Johannes Glaab, Neysha Lobo Ploch, Sven Einfeldt, and Markus Weyers, PSS 2021, https://doi.org/10.1002/pssa.202100100
“Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look” by
“Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes”, Shyam Bharadwaj, Jeffrey Miller, Kevin Lee, Joshua Lederman, Marcin Siekacz, Huili (Grace) Xing, Debdeep Jena, Czesław Skierbiszewski, and Henryk Turski, Optics Express, Vol. 28, Issue 4, pp. 4489-4500 (2020), https://doi.org/10.1364/OE.384021
“Monolithically integrated white light LEDs on (11–22) semi-polar GaN templates”, N. Poyiatzis, M. Athanasiou, J. Bai, Y. Gong & T. Wang, Scientific Reports, (2019) 9:1383, https://doi.org/10.1038/s41598-018-37008-5
“Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap” ” by Sergey Yu. Karpov, Appl. Sci. 2018, 8(5), 818; https://doi.org/10.3390/app8050818
“Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending”, Shahab Shervin, Seung Kyu Oh, Hyun Jung Park, Keon-Hwa Lee, Mojtaba Asadirad, Seung-Hwan Kim, Jeomoh Kim, Sara Pouladi, Sung-Nam Lee, Xiaohang Li, Joon Seop Kwak, and Jae-Hyun Ryou, J. Phys. D: Appl. Phys. 51 (2018) 105105 (7pp), https://doi.org/10.1088/1361-6463/aaaabf
“Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers”, Byeongchan So, Jinwan Kim, Taemyung Kwak, Taeyoung Kim, Joohyoung Lee, Uiho Choi and Okhyun Nam, RSC Adv., 2018, 8, 35528, DOI: 10.1039/c8ra06982d
“Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures”, PhD thesis by Yu-Han Liang, Carnegie Mellon University, 2017
“Carrier localization in InGaN by composition fluctuations: implication to the “green gap” ” by Sergey Yu. Karpov, Photonics Research Vol. 5, No. 2, pp. A7-A12 (2017), https://doi.org/10.1364/PRJ.5.0000A7
“Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects” by Ilya E. Titkov, Sergey Yu. Karpov, Amit Yadav, Denis Mamedov, Vera L. Zerova, and Edik Rafailov, Materials 2017, 10(11), 1323, https://doi.org/10.3390/ma10111323
“Bendable III‑N Visible Light-Emitting Diodes beyond Mechanical Flexibility: Theoretical Study on Quantum Efficiency Improvement and Color Tunability by External Strain” by Shahab Shervin, Seung-Hwan Kim, Mojtaba Asadirad, S. Yu. Karpov, Daria Zimina, and Jae-Hyun Ryou, ACS Photonics 2016, 3, 3, 486–493, https://doi.org/10.1021/acsphotonics.5b00745
“Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence” by Felix Nippert, Sergey Karpov, Ines Pietzonka, Bastian Galler, Alexander Wilm, Thomas Kure, Christian Nenstiel, Gordon Callsen, Martin Strassburg, Hans-Jürgen Lugauer, and Axel Hoffmann,
“Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency” by S.Yu. Karpov, N.A. Cherkashin, W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, M.A. Sinitsin, S.O. Usov, E. E. Zavarin, and A. F. Tsatsulnikov, Phys. Status Solidi A 213, No. 1, 19–29 (2016) / DOI 10.1002/pssa.201532491
“Light-emitting diodes for solid-state lighting: searching room for improvements” by Sergey Yu. Karpov, Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680C (8 March 2016); https://doi.org/10.1117/12.2207265
“Spectral dependence of light extraction efficiency of high-power III-nitride light-emitting diodes” by Sergey Yu. Karpov, Michael Binder, Bastian Galler, and Dario Schiavon, Phys. Status Solidi RRL 9, No. 5, 312–316 (2015) / DOI 10.1002/pssr.201510073
“Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency” by A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Sinitsyn, N. A. Cherkashin, and S. Y. Karpov Semiconductors 49, 1516–1521 (2015), https://doi.org/10.1134/S1063782615110238
“ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review” by Sergey Karpov, Opt Quant Electron 47, 1293–1303 (2015), https://doi.org/10.1007/s11082-014-0042-9
“Исследование влияния дизайна активной области монолитных многоцветных светодиодных гетероструктур на спектры и эффективность их излучения”, А.Ф. Цацульников, В.В. Лундин, А.В. Сахаров, Е.Е. Заварин, С.О. Усов, А.Е. Николаев, М.А. Синицын, Н.А. Черкашин, С.Ю. Карпов, Физика и техника полупроводников, 2015, том 49, вып. 11
“Polarization doping for III-nitride optoelectronics” by Oleg V. Khokhlev, Kirill A. Bulashevich, and Sergey Yu. Karpov, Phys. Status Solidi A 210, No. 7, 1369–1376 (2013), DOI: 10.1002/pssa.201228614
“Correlations between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures” by Eugene V. Yakovlev, Alexander S. Segal, Kirill A. Bulashevich, Sergey Yu. Karpov, and Roman A. Talalaev, JJAP 52 (2013) 08JB15, DOI: 10.7567/JJAP.52.08JB15. For more on the subject see also STREEM InGaN
“Simulation of light-emitting diodes for new physics understanding and device design” by K. A. Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, and S. Yu. Karpov, “Light-Emitting Diodes: Materials, Devices and Applications for Solid- State Lighting XVI”, Proc. of SPIE, vol. 8278 (2012)
“Modeling of III-nitride Light-Emitting Diodes: Progress, Problems, and Perspectives” by Sergey Yu. Karpov, Proc. of SPIE, vol. 7939 (2011) 79391C / DOI 10.1117/12.872842
“Effect of localized states on internal quantum efficiency of III-nitride LEDs”, Sergey Yu. Karpov, Phys. Status Solidi RRL 4, No.11, 320–322 (2010) / DOI 10.1002/pssr.201004325
“Effects of electron and optical confinement on performance of UV laser diodes” by K.A. Bulashevich, M.S. Ramm, and S.Yu. Karpov,phys. stat. solidi (c) 6, No 2, 603–606 (2009)
“Current spreading, heat transfer, and light extraction in multipixel LED array” by M.V. Bogdanov, K.A. Bulashevich, I.Yu. Evstratov, S.Yu. Karpov, phys. stat. solidi (c) 5, No. 6, 2070–2072 (2008)
“Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?” by K.A. Bulashevich and S.Yu. Karpov, phys. stat. solidi (c) 5, No. 6, 2066–2069 (2008)
“Assessment of various LED structure designs for high-current operation” by K.A. Bulashevich, M.S. Ramm, and S.Yu. Karpov, phys. stat. solidi (c) 6, No. S2, S804-S806 (2009).
“Modelling study of MQW LED operation” by V.F. Mymrin, K.A. Bulashevich, N.I. Podolskaya, I.A. Zhmakin, S.Yu. Karpov, and Yu.N. Makarov, phys. stat. sol. (c) 2, 2928-2931 (2005).
传统的 III-V 族化合物
“Critical aspects of AlGaInP-based LED design and operation revealed by full electrical-thermal-optical simulations” by Olga A. Fedorova, Kirill A. Bulashevich, ans Sergey Yu. Karpov, Vol. 29, No. 22 / 25 Oct 2021 / Optics Express 35792, (2021)
“Temperature effects on optical properties and efficiency of red AlGaInP-based light emitting diodes under high current pulse pumping” by Amit Yadav, Ilya E. Titkov, Grigorii S. Sokolovskii, Sergey Yu. Karpov, Vladislav V. Dudelev, Ksenya K. Soboleva, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, and Edik U. Rafailov, JOURNAL OF APPLIED PHYSICS 124, 013103 (2018)
“Effect of Free-Carrier Absorption on Performance of 808 nm AlGaAs-Based High-Power Laser Diodes” by K.A. Bulashevich, V.F. Mymrin, S.Yu. Karpov, Semcond. Sci. Technol. 22, No 5, 502-510 (2007)
ZnO基器件和混合II-O/III-N器件
J.W. Mares, M. Falanga, A.V. Thompson, A. Osinsky, J.Q. Xie, B. Hertog, A. Dabiran, P.P. Chow, S. Karpov, and W.V. Schoenfeld, “Hybrid CdZnO/GaN quantum-well light emitting diodes”, J. Appl. Phys. 104, 093107 (2008).
K.A. Bulashevich, I.Yu. Evstratov, and S.Yu. Karpov, “Hybrid ZnO/III-nitride light-emitting diodes: modelling analysis of operation”, phys. stat. solidi (a) 204, No. 1, 241–245 (2007).
K.A. Bulashevich, I.Yu. Evstratov, V.N. Nabokov, S.Yu. Karpov, “Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode”, Appl. Phys. Lett 87, No. 24, 243502 (2005).
