氧化物的 HVPE（氮化物、III/Vs、氧化物）和 MOCVD 建模

可使用 VR 软件的 HEpiGaNs 版本进行 HVPE 建模。HEpiGaNs 的功能还包括通过 MOCVD 生长氧化镓。以下材料和生长技术可随时使用：

• 第 III 族氮化物的生长：
  
  • GaN的块状和外延生长
    • 由 NH3 和 GaCl 或 GaCl3 制得的 HVPE
    • 由 NH3 和 Ga2O 制得的 OVPE
    • 从 NH3 和气态 Ga 和 GaHx 中提取的 HF-VPE
  • 通过 HVPE 技术实现 AlN 的块状和外延生长
  • 通过 HVPE 技术实现 AlxGa1-xN 和 InxGa1-xN 外延生长
• 氧化物：
  • 通过 HVPE 和 MOCVD 技术生长 β-Ga2O3
• 使用 III 族氯化物和 AsH3 通过 HVPE 生长 III 族砷化物
• 使用第 III 族氯化物和 PH3 通过 HVPE 生长第 III 族磷化物

Schematic view of HVPE reactor, computed flow and ammonia partial pressure

Flow Pattern and Species Distributions in HVPE growth of Ga₂O₃. Published at ECSCRM 2016

Publications

“High-Quality Epitaxial β-Ga₂O₃ Growth by Close Coupled Showerhead MOCVD” by F. Alema, B. Hertog, A. Osinsky, E. Ahmadi, F. Wu, J. Speck, M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, MRS Fall 2017, Boston, MA

“Experimental Study and Modeling of Ga₂O₃Epitaxial Growth by MOCVD in a CIS Reactor”, M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, F. Alema, B. Hertog, and A. Osinsky, IWGO 2017, Parma, Italy

“Simulation of β-Ga2O3 growth by HVPE” by M.V. Bogdanov, A.V. Kulik, M.S. Ramm, ECSCRM 2016

“Epitaxial Growth of Ga₂O₃ by MOCVD Using Oxygen: Experimental Study and Model Verification” by M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, F. Alema, B.Hertog, A. Osinsky, ACCGE-21, 2016. Santa Fe, NM

“Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN” by E. Gridneva, E. Richter, M. Feneberg, M. Weyers, R. Goldhahn, and G. Trankle, Phys. Status Solidi B, 1–9 (2015) / DOI 10.1002/pssb.201451609

“Modeling analysis of AlN and AlGaN HVPE” by A. S. Segal, D. S. Bazarevskiy, M. V. Bogdanov, and E. V. Yakovlev, Physica Status Solidi (c) 6(S2):S329 – S332 (2009)

“Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE” by E. Richter, Ch. Hennig, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Bruåckner, F. Scholz, Yu. Makarov, A. Segal, J. Kaeppeler, Journal of Crystal Growth 277 (2005) 6–12 (01)

“Surface chemistry and transport effects in GaN hydride vapor phase epitaxy” by A.S. Segal, A.V. Kondratyev, S.Yu. Karpov, D. Martin, V. Wagner, M. Ilegems, Journal of Crystal Growth 270 (2004) 384–395 (01)