III 族氮化物外延建模
氮化物：III 族氮化物外延系统的建模
氮化物：III 族氮化物外延系统的建模
(1).VR™氮化物版适用于以下反应器类型的建模：
- 行星反应堆
- 高速旋转涡盘反应器
- 水平反应器
- 近耦合喷淋头反应器
- 可以在二维平面或轴对称模型内模拟的自制反应器
- 可在二维平面或轴对称模型内模拟的自制反应器
对于基本采用三维结构的反应器，化学模型可作为某些多物理场软件包的附加组件。
(2).软件包括以下现成的化学模型：
- 从 TMGa 和 NH3 生长GaN
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- 无意中掺入碳的AlGaN
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- 使用 CH4 的碳掺杂GaN
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- 利用 SiH4 通过Si 掺杂GaN
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- 利用 MgCp2 通过Mg掺杂GaN
- 利用 TMAl 和 NH3 生长AlN
- 从 TMAl、TMGa 和 NH3 生长出 AlGaN
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- 无意中掺入碳的AlGaN
- InGaN的生长
- 来自 TMGa、TMIn 和 NH3
- 由 TEGa、TMIn 和 NH3 生长而成
- 从 TMAl、TMIn 和 NH3 生长出 AlInN
关于不同的前驱体模型，如果有请直接咨询我们。本软件正在不断开发中，某些模型可能已经可用也可能会添加。
Example of the use of chemical model: Effect of process conditions on AlN growth rate and
source efficiency in Veeco PropelTM MOCVD single wafer reactor … ,
based on advanced CFD and chemistry modeling. B. Mitrovic et al., CS Mantech 2017
Publications
“Mechanisms of intrinsic carbon doping during MOVPE of AlN- and GaN-based materials” by Roman Talalaev and Anna Lobanova, The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), was hosted in Bellevue, Washington, Seattle’s Eastside
“Indium incorporation in quaternary InxAlyGa1−x−yN for UVB-LEDs” by Johannes Enslin, Tim Wernicke, Anna Lobanova, Gunnar Kusch, Lucia Spasevski, Tolga Teke, Bettina Belde, Robert W. Martin, Roman Talalaev and Michael Kneissl, June 2019 Japanese Journal of Applied Physics 58(SC):SC1004
“Modeling analysis of carbon incorporation in AlxGa1−xN (x>0.9) grown by MOVPE” by Anna Lobanova, Frank Mehnke, Roman Talalaev, Tim Wernicke, Michael Kneissl, poster at EWMOVPE18th, 2019, Vilnus, Lithuania
“Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor” by B. Mitrovic*, R Bubber, J. Su, E. Marcelo, M. Deshpande, and A. Paranjpe, CS Mantech 2017
“Modeling and process design of III-Nitride MOVPE at near-atmospheric pressure in Close Coupled Showerhead and Planetary Reactors” by M. Dauelsberg, C. Martin, H. Protzmann, A. R. Boyd, E. J. Thrush, J. Kappeler, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A. V. Kondratyev, Journal of Crystal Growth 298, 418 (2007)
“Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor” by E.V. Yakovlev, R.A. Talalaev, R.W. Martin, C. Jeynes, N. Peng, C.J. Deatcher, and I.M. Watson, Phys. Stat. Sol. (c) 3, 1620 (2006)
“Effect of V/III ratio in AlN and AlGaN MOVPE” by A.Lobanova, K.Mazaev, R.A.Talalaev, M.Leys, S.Boeykens, K.Cheng, S.Degroote, Journal of Crystal Growth 287, 601 (2006)
“In-situ investigations of GaN chemical instability during MOCVD” by Zavarin E.E., Sizov D.S., Lundin W.V., Tsatsulnikov A.F., Talalaev R.A., Kondratyev A.V., Bord O.V., Electrochemical Society Proceedings 2005-09, 299 (2005)
